Stability of Plasma Posttreated TiN Films Prepared by Alternating Cyclic Pulses of Tetrakis-Dimethylamido-Titanium and Ammonia
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概要
- 論文の詳細を見る
The effect of plasma posttreatment on the resistivity and stability of tetrakis-dimethylamido-titanium (TDMAT)-based atomic layer deposition TiN films was investigated. Posttreatment with hydrogen plasma was effective for lowering the resistivity of the TiN films and also for improving their stability in air. Longer plasma pulse times with high power yielded films of lower resistivity aand increased stability in air. However, there was no noticeable improvement of the film's stability with nitrogen plasma gas.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-01-15
著者
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Kim Do-heyoung
Faculty Of Applied Chemical Engineering And Research Institute For Catalysis Chonnam National Univer
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Kim Do-Heyoung
Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University, 300 Youngbong-dong, Kwangju 500-757, Korea
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Park Seoung
Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University, 300 Youngbong-dong, Kwangju 500-757, Korea
関連論文
- Effect of N_2/H_2 Plasma Treatment on the Properties of TiN Films Prepared by Chemical Vapor Deposition from TiCl_4 and NH_3
- Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment
- Stability of Plasma Posttreated TiN Films Prepared by Alternating Cyclic Pulses of Tetrakis-Dimethylamido-Titanium and Ammonia