Effect of N_2/H_2 Plasma Treatment on the Properties of TiN Films Prepared by Chemical Vapor Deposition from TiCl_4 and NH_3

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概要

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• In this work, we studied the effect of N_2/H_2 plasma post-treatment on the film properties of TiCl_4-based CVD TiN films. The N_2/H_2 plasma post-treatment was found to strongly affect the resistivity and chlorine content of the TiN films. This effect became profound for films deposited after lowering the deposition temperature. The resistivity and the content of chlorine in the deposits could be reduced by about 70% and 30%, respectively, via the plasma treatment. However, there was no distinguishable effect of plasma post-treatment on the crystal structure of the TiN films.

• 社団法人応用物理学会の論文
• 1999-04-15

著者

• KIM Do-Heyoung

  Faculty of Applied Chemistry and Research Institute for Catalysis, Chonnam National University

• Kim D‐h

  Faculty Of Applied Chemical Engineering College Of Engineering Chonnam National University

• Kim Do-heyoung

  Faculty Of Applied Chemical Engineering And Research Institute For Catalysis Chonnam National Univer

• KIM Byung

  Central Research Laboratory, LG Semicon Co., Ltd.

• Kim Byung

  Central Research Laboratory Lg Semicon Co. Ltd.

関連論文

• Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment
• Effect of N_2/H_2 Plasma Treatment on the Properties of TiN Films Prepared by Chemical Vapor Deposition from TiCl_4 and NH_3
• Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment
• Stability of Plasma Posttreated TiN Films Prepared by Alternating Cyclic Pulses of Tetrakis-Dimethylamido-Titanium and Ammonia

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