Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET
スポンサーリンク
概要
- 論文の詳細を見る
The gate-length dependencies of the optical response characteristics in an opticallycontrolled metal oxide semiconductor field effect transistor (MOSFET) have been measured. This device was fabricated as an integratedstructure of the absorption region and MOSFET region using the direct wafer-bonding technique. By reducing the gate length of the MOSFET region, the transconductance of the FET channel was increased, and a high current modulation and responsivity was obtained by irradiation of 1.5 µm wavelength light.
- 1999-04-30
著者
-
Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
-
Shimomura Kazuhiko
Department of Electrical and Electronics Engineering,
-
Yamagata Yuichi
Department of Electrical and Electronics Engineering,
関連論文
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- High Responsivity in Optically Controlled Field-Effect Transistor Using Direct Wafer Bonding Technique
- Proposal of Field-Effect-Type Photodetector Using Field-Screening Effect in the Absorption of Light
- High Responsivity in an Optically Controlled Field-Effect Transistor Using the Direct Wafer Bonding Technique
- Novel Waveguide GaInAs/InP MQW Optical Deflector Using Comb Like Electrode
- Numerical Analysis of Current Modulation in Optically-Controlled Field-Effect Transistor
- Fabrication of Quantum Dots for Wavelength Converter Using Four-Wave Mixing
- Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET
- Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect
- Optically Controlled Metal-Oxide Semiconductor Field-Effect Transistor Operated by Long-Wavelength Light
- Bonding Temperature Dependence of Optically Controlled Field-Effect Transistor Fabricated by Direct Wafer Bonding Technique
- Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET
- Switching Characteristics in Variable-Index Arrayed Waveguides Using Thin-Film Heater
- Numerical Calculation of Wavelength Demultiplexed Light Switching Using Variable Index Arrayed Waveguide
- Flat-Topped Emission with Spectral Width above 500nm from InAs/InP Quantum Dot Waveguide Array Light-Emitting Diode