Proposal of Field-Effect-Type Photodetector Using Field-Screening Effect in the Absorption of Light
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概要
- 論文の詳細を見る
A field-effect-type photodetector is proposed. The proposed device is an field-effect-transistor (FET) structure whose output current is controlled by the potential applied to the FET resulting from the field-screening effect of the photogenerated carriers in a diode overlaid on the FET.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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SHIMOMURA Kazuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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Shimomura Kazuhiko
Department Of Electrical And Electronics Engineering Sophia Universiry
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Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
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