Bonding Temperature Dependence of Optically Controlled Field-Effect Transistor Fabricated by Direct Wafer Bonding Technique
スポンサーリンク
概要
- 論文の詳細を見る
An optically controlled field-effect transistor (FET) in which the GaAs FET region and the GaInAs/InP light absorption region were directly bonded was demonstrated. The temperature dependence of the direct bonding and its effect on the performance of the optically controlled FET were examined. A maximum current modulation rate of 60% and a responsivity of more than 150(A/W) were obtained.
- 社団法人応用物理学会の論文
- 1996-07-01
著者
-
Sakai T
Department Of Electrical And Electronics Engineering Sophia University
-
Sakai Takayuki
Department Of Electrical And Electronics Engineering Sophia University
-
Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
関連論文
- Pepsin-Digested Bovine Lactoferrin Induces Apoptotic Cell Death With JNK/SAPK Activation in Oral Cancer Cells
- Involvement of phosphatidylcholine hydrolysis by phospholipase C in prostaglandin F2α-induced 1, 2-diacylglycerol formation in osteoblast-like MC3T3-E1 cells
- ピオグリタゾンは肥満型糖尿病の腎症を改善させる--腎臓の酸化反応を緩和する
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- High Responsivity in Optically Controlled Field-Effect Transistor Using Direct Wafer Bonding Technique
- Proposal of Field-Effect-Type Photodetector Using Field-Screening Effect in the Absorption of Light
- High Responsivity in an Optically Controlled Field-Effect Transistor Using the Direct Wafer Bonding Technique
- Novel Waveguide GaInAs/InP MQW Optical Deflector Using Comb Like Electrode
- Numerical Analysis of Current Modulation in Optically-Controlled Field-Effect Transistor
- Fabrication of Quantum Dots for Wavelength Converter Using Four-Wave Mixing
- Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET
- Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect
- Optically Controlled Metal-Oxide Semiconductor Field-Effect Transistor Operated by Long-Wavelength Light
- Bonding Temperature Dependence of Optically Controlled Field-Effect Transistor Fabricated by Direct Wafer Bonding Technique
- Gate-Length Dependence of Optical Characteristics in Optically Controlled MOSFET
- Switching Characteristics in Variable-Index Arrayed Waveguides Using Thin-Film Heater
- Numerical Calculation of Wavelength Demultiplexed Light Switching Using Variable Index Arrayed Waveguide
- Flat-Topped Emission with Spectral Width above 500nm from InAs/InP Quantum Dot Waveguide Array Light-Emitting Diode