Optically Controlled Metal-Oxide Semiconductor Field-Effect Transistor Operated by Long-Wavelength Light
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概要
- 論文の詳細を見る
The drain-to-source current of a metal-oxide semiconductor field-effect transistor (MOSFET) was controlled by long-wavelength laser light for the first time, The device studied was composed of an absorption region and a MOSFET, and these two regions were bonded by polyimide. When the voltage was applied to the absorption region, it showed the normal operation of a MOSFET. When the laser light with a wavelength of 1.48 μm was irradiated on to the absorption region, a responsivity of more than 100 A/W was achieved. This device modulates the current of the MOSFET by changing the electric field in the absorption region, and it has the possibility of high-speed operation up to 60 GHz.
- 社団法人応用物理学会の論文
- 1996-12-01
著者
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Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
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YAMAGATA Tomonari
Department of Electrical and Electronics Engineering, Sophia University
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Yamagata T
Sophia Univ. Tokyo Jpn
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Yamagata Tomonari
Department Of Electrical And Electronics Engineering Sophia University
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SHIMOMURA Kazuhiko
Department of Electrical and Electronics Engineering, Sophia University
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