Quick Deposition of ZuS:Mn Electroluminescent Thin Films by Intense, Pulsed, Ion Beam Evaporation

概要

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Electroluminescent ZnS:Mn thin films have been guickly deposited by a high-density, high-temperature plasma produced by the irradiation of an intense ($>$GW/cm2), pulsed ($\sim$ tens of ns) ion beam onto a ZnS:Mn target. The films prepared on a glass substrate have a polycrystalline hexagonal structure. The temperature of the target plasma was estimated to be ${\sim}2.7$ eV, where the plasma was highly ionized. The instantaneous deposition rate was estimated to be ${\sim}4$ cm/s, which is at least five orders of magnitude higher than that of any other conventional evaporation techique. We have prepared a ZnS:Mn electroluminescent device with a luminescent layer having a thickness of ${\sim}200$ nm. The device has a threshold voltage of ${\sim}80$ V0p (zero to peak value). The maximum luminance of 195 cd/m2 has been obtained under 10 kHz sinusoidal excitation at 144 V0p.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-03-20