Composition Dependence of Exciton Band Gaps and Edge Emissions of AgGa(S1-xSex)2
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概要
- 論文の詳細を見る
Composition dependence of the lattice constants and edge emissions of crystals of AgGa(S1-xSex)2 solid solution grown by the sintering method were examined in comparison with those grown by the iodine vapour transport method using sintered crystals as raw materials. Phase shift difference measurement of reflection showed a linear dependence of the band gap on composition, whereas a slight bowing characteristic was observed in composition dependence of edge emission. The shift of composition, $x$, during the iodine vapour transport growth and slight bowing of the edge emissions confirmed from these experiments are discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Horinaka Hiromichi
College Of Engineering University Of Osaka Prefecture
-
Yamamoto Nobuyuki
College Of Agriculture Ehime University
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Mouri Atsusi
College of Engineering, University of Osaka Prefecture, Mozu, Sakai, Osaka 591
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Setoyama Makoto
College of Engineering, University of Osaka Prefecture, Mozu, Sakai, Osaka 591
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