Platinum-Platinum Oxide Gate pH ISFET
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概要
- 論文の詳細を見る
Platinum-platinum oxide gate ISFETs (ion sensitive field effect transistors) have been designed and fabricated for a stable pH microsensor. The platinum oxide layer, formed by a new fabrication process using an RF sputtering technique, was identified as PtO2 by X-ray photoelectron spectroscopy. The pH response of the platinum-platinum oxide gate ISFET was linear in the pH range between 1 and 10, and a sensitivity of $40.5\pm 4.0$ mV/pH was obtained. The ISFET developed had better stability than a conventional Si3N4 bare gate ISFET.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Tsukada Keiji
Central Research Laboratory Hitachi Ltd.
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MIYAHARA Yuji
Central Research Laboratory Hitachi Ltd.
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Miyahara Yuji
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji 185
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Miyagi Hiroyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji 185
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