Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-$k$ Memory Device

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概要

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• Memory devices containing the nanocrystalline Si embedded Zr-doped HfO2 high-$k$ dielectric film, which have many advantages over the conventional non-doped high-$k$ films, have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance–voltage hysteresis, e.g., 2.98 V, and negative differential resistance region in the positive bias current–voltage characteristics. A large memory operation window, e.g., 0.72 V, with a long charge retention time, e.g., $>$10,000 s, was achieved under the proper gate stress voltages. It is a viable dielectric for future nano-size metal oxide semiconductor field effect transistors and capacitors.

• 2006-09-25

著者

• Lu Jiang

  Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ

• Kuo Yue

  Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ

• Lin Chen-Han

  Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.

• Yan Jiong

  Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.

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• Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-$k$ Memory Device

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