A Novel Plasma-Based Copper Dry Etching Method
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概要
- 論文の詳細を見る
A new copper dry etching method has been discovered and studied. The process is based on an unique HCl plasma-copper reaction that forms a solution soluble copper chloride compound. The physical(e.g., morphology, profile, volume expansion, and anisotropy)and chemical(e.g., reaction mechanism)aspects of the solid-state copper chloride growth mechanism have been delineated. This new process is applicable to the copper interconnection technology for advanced microelectronic and optoelectronic devices and circuits.
- 社団法人応用物理学会の論文
- 2000-03-15
著者
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Kuo Yue
Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ
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Kuo Yue
Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ
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LEE Sangheon
Thin Film Microelectronics Research Laboratory, Department of Chemical Engineering, Texas A&M Univer
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Lee Sangheon
Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ
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Lee Sangheon
Thin Film Microelectronics Research Laboratory Department Of Chemical Engineering Texas A&m Univ
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