Mechanism of Silicon Dioxide Decoupled Plasma Nitridation
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概要
- 論文の詳細を見る
The mechanism for decoupled plasma nitridation of silicon dioxide thin films is investigated using experimental measurements of nitrogen depth profile and integrated plasma equipment—surface physics modeling. Results show that neutral N atoms and N2+ ions are the primary agents responsible for dielectric film nitridation. N atoms adsorb at the dielectric surface and diffuse into the bulk film. N2+ ions are deposited in an ion-implantation like manner and broaden the nitrogen profile considerably. The surface nitrogen concentration can be enhanced by increasing the plasma source power. Nitrogen diffusion coefficient in the dielectric film decreases with increasing film thickness.
- Japan Society of Applied Physicsの論文
- 2006-04-25
著者
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Luo Tien-ying
Freescale Semiconductor Inc.
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Lim Sang
Department Of Anesthesiology And Pain Medicine Korea University Guro Hospital
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Lim Sang
Department of Chemical Engineering, Yonsei Universtiy, Seoul 120-749, Korea
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Jiang Jack
Freescale Semiconductor, Inc., Austin, TX 78721, U.S.A.
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