Low-Leakage Polymeric Thin-Film Transistors Fabricated by Laser Assisted Lift-Off Technique
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概要
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Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using a patterning method of the selective wettability. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly(9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique, the leakage of the gate current is drastically reduced.
- 2005-08-10
著者
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Kim Dong-woo
School Of Electrical Engineering #32 Seoul National University
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Yu Chang-jae
School Of Electric Engineering #32 Seoul National University
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Suh Min
Corporate R&d Center Samsung Sdi Co. Ltd.
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Lee Sin-doo
School Of Electric Engineering #32 Seoul National University
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Kim Sung-jin
School Of Electrical Engineering #32 Seoul National University
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Kim Dong-Woo
School of Electrical Engineering #32, Seoul National University, Kwanak P.O. Box 34, Seoul 151-742, Korea
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Ahn Taek
Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea
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Ahn Taek
Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea
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Yu Chang-Jae
School of Electrical Engineering #32, Seoul National University, Kwanak P.O. Box 34, Seoul 151-742, Korea
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Suh Min
Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea
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