Enhancement of the Stability of Capacitance—Voltage Characteristics of Hg1-xZnxTe—Based Metal–Insulator–Semiconductor Capacitors by Voltage Annealing
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概要
- 論文の詳細を見る
By electrochemical deposition, an anodic oxide film composed of a compound containing HgTeO3, ZnTeO3, and TeO2-rich components was formed on a Hg1-xZnxTe material surface. After the anodic oxide film deposition, a voltage annealing process in which the electrical potential is maintained constant was applied. This process improves the quality of the anodic oxide film. The capacitance-voltage ($C$–$V$) measurement of the metal–insulator–semiconductor (MIS) capacitor of Ni/In/ZnS/oxide/Hg1-xZnxTe confirms the enhancement of the stability of MIS capacitor characteristics by the voltage annealing process.
- Japan Society of Applied Physicsの論文
- 2004-10-01
著者
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Kim Young-hun
Information And Electronics Research Institute Kaist
-
Kim Sung-hoon
Department Of Chemistry Konkuk University
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Kim Young-Hun
Information and Electronics Research Institute, KAIST, Daejeon 305-701, Korea
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Kim Sung-Hoon
Department of Nano Materials Chemistry & Engineering, Fusion Technology Research Institute for Marine Pharmaceutical Materials, Silla University, Pusan 617-736, Korea
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