A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications
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概要
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A 0.1-12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower is designed as latter stage for S2D conversion. This LNA is fabricated in a 0.13-µm CMOS process with an active area of 0.33mm2. The measurement results show that over the full band of interest, the LNA achieves a minimum noise figure (NF) of 3.2dB, input reflection coefficient S11 less than -9.3dB, a power gain (S21) of 14.1dB and -3.6dBm IIP3 with a power consumption of 10.8mW from 1.2-V supply.
著者
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Li Ning
State Key Laboratory For Agrobiotechnology College Of Biological Science China Agricultural Universi
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LI Wei
State Key Lab of High Performance Ceramics & Superfine Microstructure, Shanghai Institute of Ceramic
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Li Ning
State Key Laboratory of ASIC & System; Fudan University
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Ren Junyan
State Key Lab of ASIC and System, Fudan University
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Ren Junyan
State Key Laboratory of ASIC & System; Fudan University
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Li Wei
State Key Laboratory of ASIC & System; Fudan University
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Zhang Kaichen
State Key Laboratory of ASIC & System; Fudan University
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