Electrical and Optical Behaviour of Tetrathionaphthacene at High Pressures
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概要
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The temperature dependence of the electrical resistance and the absorption spectra for tetrathionaphthacene (T.T.N.) have been studied at high pressure. It has been found that the intrinsic conduction level, which does not correspond to the observed optical transition, is located about 2 eV above the valence band. The red shift of absorption peaks with the pressure was much smaller than the contraction of the intrinsic band gap. The existence of the intrinsic conduction level is supported by the fact that the minimum of the photoemission yield arising from electron-pair production is located about 2 eV above the threshold point. The band gap of 0.4–0.62 eV previously observed seems to correspond to an acceptor level formed by chemical impurities.
- 公益社団法人 日本化学会の論文
著者
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Shirotani Ichimin
The Institute For Solid State Physics The University Of Tokyo
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Kawada Kaoru
The Institute for Solid State Physics, The University of Tokyo
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Inokuchi Hiroo
The Institute for Molecular Science
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