低周波2層プラズマCVD法によるシリコン窒化膜の高速堆積化

概要

論文の詳細を見る
This paper reports that the deposition rate of silicon nitride film deposited with the 50 Hz-plasma CVD method can be improved by using double plasmas. The maximum value of the deposition rate of the obtained film was about 400 Å/min. The characteristics of the silicon nitride films deposited by the double-plasma CVD without a substrate heater were as follows. The refractive index was 2.0, and resistivity and breakdown field strength were about 1015 Ω cm and above 106 V /cm, respectively. Using the double-plasma CVD method, silicon nitride films can be deposited rapidly without problems such as excessive ion bombardment and film breakdown. Moreover, the mechanism of the deposition of highquality silicon nitride and that of the high deposition rate using double-plasma CVD were discussed on the basis of the experimentally observed N2* optical emission intensity from the double plasma as a function of position on the discharge axis.
日本真空協会の論文