室温・低周波 (50 HZ) プラズマCVD法によるSiNx 膜の評価

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This paper reports the deposition of silicon nitride films on the substrate held at room temperature using 50 Hz plasma CVD with monosilane and nitrogen mixture. Characteristics of the silicon nitride films deposited on 5 inches Si wafer were as follows. Refractive index of the silicon nitride films was 2.0, and resistivity and breakdown field strength were about 1015 Ω cm and above 106 V/cm, respectively. The distribution of film thickness on 5 inches Si wafer was 1000Å±30Å. Fixed charge density and suface state density of Al/SiNx/SiO2/Si (MNOS) were about 1.5×1011 cm-2 and 8×1010 cm-2eV-1, respectively. Substrate temperature dependence of the film properties were also discussed. As high the temperature (<200°C) is, the films become Si rich. However electrical properties were not changed.
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