イオンビーム加工法によるスパッタ率

概要

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The sputtering yield, especially as a function of ion incident angle, has been investigated experimentally and theoretically.<BR>The sputtering yields are obtained by measuring the decrease of material weight after ion bombardment. The experiments are carried out by sputtering silicon (111), silicon (100) and copper surfaces with 1 keV argon ions from Kaufman type ion source.<BR>Trajectories of incident ions which are scattered with target atoms are calculated by Monte Carlo simulation based on the LSS theory.<BR>The dependence of the ion incident angle on the sputtering yield can be explained as the competition between the effects of sputtering and backscattering.
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