低周波GD法によるa-Si : H膜成長 : 放電電源周波数依存性

概要

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To eliminate standing wave effect in RF glow discharge decomposition equipments, use of low frequency glow discharge excitation is one of hopeful alternative. Effect of glow discharge excitation frequency on growth rate and film quality of a-Si : H decomposed from SiH<SUB>4</SUB> was experimentally examined. Growth rate of the film on a conductive substrate increased as the excitation frequency decreased, while growth rate of the film on a insulating (glass) substrate remained constant. Bonded hydrogen and optical gap of the film slightly increased as the frequency decreased. Photoconductance of the fim remained relatively constant around 10<SUP>-4</SUP> S/cm for AM1 60 mW insolation. Rectified wave excitation showed interesting results i.e high photoconductance with highest growth rate. The effect on the p-i or i-n junction characteristics was left to be the next subject to be examined.
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