Metal-induced gap states in epitaxial organic-insulator/metal interfaces
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概要
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We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.
- American Physical Societyの論文
著者
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Kondoh H
Ricoh Co. Ltd. Miyagi Jpn
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Ohta T
Institute For Nonlinear Sciences And Applied Mathematics Graduate School Of Sciences Hiroshima Unive
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Ohta Toshiaki
Department Of Chemistry School Of Science The University Of Tokyo
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Ohta T
Department Of Chemistry Graduate School Of Science The University Of Tokyo
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