Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten
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A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 °C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H_2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements.
- American Institute of Physicsの論文
- 1999-04-12
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