Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH_4/H_2 system
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The absolute densities of H atoms produced in catalytic chemical vapor deposition (Cat-CVD or hot-wire CVD) processes were determined by employing two-photon laser-induced fluorescence and vacuum ultraviolet absorption techniques. The H-atom density in the gas phase increases exponentially with increases in the catalyzer temperature in the presence of pure H_2. When the catalyzer temperature was 2200 K, the absolute density in the presence of 5.6 Pa of H_2 (150 sccm in flow rate) was as high as 1.5×10^<14> cm^<-3> at a point 10 cm from the catalyzer. This density is one or two orders of magnitude higher than those observed in typical plasma-enhanced chemical vapor-deposition processes. The H-atom density decreases sharply with the addition of SiH_4. When 0.1 Pa of SiH_4 was added, the steady-state density decreased to 7×10^<12> cm^<-3>. This sharp decrease can primarily be ascribed to the loss processes on chamber walls.
- American Institute of Physicsの論文
- 2002-02-01
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