712 水素またはケイ素を含有したDLC被膜の熱電特性評価(OS7-(4)オーガナイズドセッション《精密/微細加工と評価》)

概要

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This paper presents an investigation of the influence of the Hydrogen or Silicon addition to thermoelectric performance of DLC films on glass substrates using RF plasma CVD method. The DLC films were prepared using CH_4 + HMDSO gas mixture, CH_4 and C_6H_6 as the source gas. The respective thermoelectric performance of the DLC films were evaluated and compared. The Seebeck coefficients of the DLC films decreased with decreasing Hydrogen and increasing the Silicon concentration at the range from 0% to 14.5%. Resistivity of the DLC films was creased with increasing Hydrogen and Silicon concentration at temperatures from 25℃ to 150℃. The power factor of the DLC films was decreased with decreasing Hydrogen concentration at temperatures from 100℃ to 150℃ and increasing the Silicon concentration at temperatures from 25℃ to 150℃.
2011-08-26