MP-32 水晶基板上での高密度水平配向単層カーボンナノチューブの合成(ポスターセッション)

概要

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Parametric study of high-density and high-alignment CVD growth of horizontally aligned single-walled carbon nanotubes (HA-SWNTs) on R-cut crystal quartz was performed. Effects of partial pressure of carbon source gas, sample position, growth time and substrate chemical etching were studied. Lower partial pressure, upper stream position and longer growth time are reported here to increase the density. It is proposed that bundling of SWNTs prevents aligned growth and low supply rate of carbon source causes increase of the ratio of SWNTs grown individually without bundling, which results in highly dense HA-SWNTs. Chemical etching was also found to improve the alignment. Highly dense and aligned HA-SWNTs are crucial to fabrication of high performance devices.
一般社団法人日本機械学会の論文
2011-09-25