MNM-P2-2 単層CNTのパターン合成による高性能FET簡易作製(P2 ナノ材料と熱工学)

概要

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Carbon nanotube field-effect transistor (CNT-FET) is promising candidate for future electronic device, however, the fabrication process is still challenging. We realized a simple technique for manufacturing FETs by using single-walled CNTs (SWNTs) as both electrodes and channel. Such all-SWNT FET showed excellent properties with I_<ON>/I_<OFF> ratio of 10^6. This electrical property exceeds previously reported all-CNT FET. In this study, we combined self-assembled monolayer (SAM) and photoresist to pattern a Si substrate in hydrophilic and hydrophobic regions. Patterned SWNT films were obtained only on the SAM removal area followed by dip-coating and alcohol CVD. For measuring the FET properties, the substrate and vertically-aligned SWNT films were used as back-gate and source/drain electrodes, respectively. We suggest that the three-dimensional SWNT structures can be useful for novel metal-free devices. Here we will discuss the possibility of such all-SWNT FET.
2010-10-12