電子波の干渉効果を用いたスウィッチングデバイスの提案

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概要

• 論文の詳細を見る

• A new switching device utilizing the quantum interference effects is proposed. AlGaAs-GaAs superlattice exhibits strong quantum interference effects due to quantum mechanical reflection at respective conduction band potential step. In AlGaAs-GaAs layered structures, the pass band, the stop band ,and the pass band appears with increasing electron energy. Electron energy can be modulated by the gate voltage. Therefore, the transmission coefficient of electrons wave is changed by the gate voltage. Thus, electronwaves transmit for some range of the gate voltage and reflected for the other gate voltage. This nature can be applied for realizing a new switching device.

• 福山大学の論文

著者

• 相島 亜洲雄

  福山大学工学部電子・電気工学科

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