High Field Transport Properties in AlGaAs-GaAs-AlGaAs Single Quantum Well Layer

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概要

• 論文の詳細を見る

• The distribution function of electrons in momentum space, electron velocity, popuration ratio, etc., in AlGaAs-GaAs-AlGaAs single quantum well layers, have been calculated as a function of the applied voltage parallel to the interface. It has been found from the results that the electron drift mobility in higher mobility samples decreases rapidly with increasing the applied voltage because of the increase of the polar optical phonon emission rate. The electron velocity-field characteristics in two dimensional electron gas have been compared with those in usual bulk electrons. It has been shown that the electron velocity-field characteristics differ only slightly from those in bulk electrons.

• 福山大学の論文

著者

• 相島 亜洲雄

  福山大学工学部電子・電気工学科

• 相島 亜洲雄

  Department of Electronics and Electrical Engineering, Fukuyama University

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