Optically Controlled n-InP Distributed Phase Shifter

概要

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The space charge modes in an n-InP diode with a suitably designed Schottky barrier cathode under illumination have been investigated numerically. It has been found that the cathode trapped domain mode changes into a travelling dipole domain mode with increasing illumination. An optically controlled phase shifter can be achieved by inserting an n-InP diode with a Schottky barrier cathode between a resonant microstrip lines in place of a conventional dielectric material. Phase shifts have been predicted as high as 2π radians/cm with the plasma density less than 10^<15>/cm^3. The device has a gain as a result of the electron transfer from the lower valley with light mass to the upper valleys with heavy mass. Ultra-fast and high-repetition rate phase modulation is possible, since the life time of the excess carriers in an n-InP diode is less than 100 ps.
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