Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al_2O_3 and SiO_2 stacked tunneling layers
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概要
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The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al_2O_3 and SiO_2 stacked tunneling layers were investigated. The electron and hole drifts in the Si_3N_4 layer were calculated to determine the program speed of the proposed SANOS devices by using the two band model taking into account Shockley-Reed statistics for the trap population, the continuity equation for the charge transport, and the Poisson equation for the electric field. Simulation results showed that enhancement of the programming speed in polysilicon-oxide-nitride-oxide-silicon was achieved by utilizing SiO_2 and Al_2O_3 stacked tunneling layers and the top Al_2O_3 blocking layer.
- 2009-06-17
著者
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Kim H.
Department of Nanoscale Semiconductor Engineering, Hanyang University
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Kim D.
Division of Electronics and Computer Engineering, Hanyang University
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You J.
Division of Electronics and Computer Engineering, Hanyang University
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Kim T.
Department of Nanoscale Semiconductor Engineering, Hanyang University
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Kim D.
Division Of Electronics And Computer Engineering Hanyang University
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You J.
Division Of Electronics And Computer Engineering Hanyang University
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Kim H.
Department Of Advanced Materials Science The University Of Tokyo
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Kim T.
Division Of Electronics And Computer Engineering Hanyang University:department Of Nanoscale Semicond
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Kim T.
Department Of Chemistry And Research Institute Of Natural Sciences Gyeongsang National University
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Kim D.
Division Minerals & Materials Processing Korea Institute Of Geoscience And Mineral Resources (ki
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Kim H.
Department Of Nanoscale Semiconductor Engineering Hanyang University
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