19aA02 スパッタ製膜初期過程におけるフラックスの影響(ナノ粒子・ナノ構造(1),第35回結晶成長国内会議)

概要

論文の詳細を見る
Island formation processes in the initial stage of vapor deposition have provoked an interest for a long time due to fundamental interest and technological importance. However, the high growth rates of sputtering process often hamper a detailed investigation. In this work, we applied combinatorial masked deposition (CMD) method to investigate the initial stage of Ir and Ag deposition by sputtering. The dependence of island growth characteristics on deposition flux was investigated, and different flux dependence between Ir and Ag was observed.
日本結晶成長学会の論文
2005-08-17