Formation of SiC Particles with Projections and a Complex Inner Substructure at the End Stage of Nanowire Growth(Cross-disciplinary physics and related areas of science and technology)

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概要

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• SiC particles that are covered with projections and have a porous inner substructure are grown via metal organic chemical vapor deposition using methylvinyldichlorosilane as the source material and Fe catalyst on the Si substrate. Electron microscopy reveals that a SiC particle is located at the tip of a nanowire indicating that a SiC particle is formed at the final stage of a metal-mediated growth of a nanowire. A catalyzed ballistic deposition model is proposed to explain the growth of the particles.

• 社団法人日本物理学会の論文
• 2009-03-15

著者

• Kohno Hideo

  Osaka Univ. Osaka

• Kohno Hideo

  Graduate School Of Science Osaka University

• Ichikawa Satoshi

  Institute For Nanoscience Design Osaka University

• Shoda Kaoru

  Ube Scientific Analysis Laboratory Inc.

• ICHIKAWA Satoshi

  Organization for Promotion of Research on Nanoscience and Nanotechnology, Osaka University

• TAKAO Shuhei

  Graduate School of Science, Osaka University

• EGUCHI Tatsuyuki

  UBE Scientific Analysis Laboratory, Inc.

• YATA Hirohide

  UBE Scientific Analysis Laboratory, Inc.

• Takao Shuhei

  Graduate School Of Science Osaka University

• Yata Hirohide

  Ube Scientific Analysis Laboratory Inc.

• Eguchi Tatsuyuki

  Ube Scientific Analysis Laboratory Inc.

• Ichikawa Satoshi

  Organization For Promotion Of Research On Nanoscience And Nanotechnology Osaka University

関連論文

• In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
• Statistical and Stochastic Properties of Stacking Sequences in SiC Nanowires
• Formation of SiC Particles with Projections and a Complex Inner Substructure at the End Stage of Nanowire Growth(Cross-disciplinary physics and related areas of science and technology)
• Analysis of grain boundaries in CoCrTa and CoPtCrB HDD media by analytical transmission electron microscopy
• Transmission-Electron-Microscopy Observation of Pt Pillar Fabricated by Electron-Beam-Induced Deposition
• Statistical and Stochastic Properties of Stacking Sequences in SiC Nanowires
• Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN/Sapphire Interface

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