Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN/Sapphire Interface

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概要

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• The local atomic environment of nitrogen inside voids was investigated by transmission electron microscopy (TEM) and high-angle annular dark-field (HAADF)-scanning TEM (STEM) imaging, electron energy loss spectroscopy (EELS), and in situ electron beam irradiation experiments. Voids were formed on the sapphire side at the interface between GaN and the sapphire substrate. EELS analyses revealed that nitrogen existed inside the voids and its bonding type differed from GaN. Electron beam irradiation caused nitrogen inside the voids to be released into a vacuum as gaseous nitrogen. By assessing the amount of nitrogen inside the voids, the density of nitrogen was estimated as $1.9\pm 0.4$ g/cm3, and the volume as $15.6\pm 3.0$ cm3/mol, which means that nitrogen inside the voids may be in the molecular state of solid nitrogen as $\delta$-N2. Based on the results, a mechanism of formation of voids is proposed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• Shoda Kaoru

  Ube Scientific Analysis Laboratory Inc.

• Matsubara Tohoru

  Ube Scientific Analysis Laboratory Inc.

• Shoda Kaoru

  UBE Scientific Analysis Laboratory, Inc., Tokiwadai, Ube, Yamaguchi 755-0001, Japan

• Matsubara Tohoru

  UBE Scientific Analysis Laboratory, Inc., Tokiwadai, Ube, Yamaguchi 755-0001, Japan

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• Transmission Electron Microscopy Investigation of Local Atomic Environment of Nitrogen inside Voids Formed at GaN/Sapphire Interface

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