Statistical and Stochastic Properties of Stacking Sequences in SiC Nanowires

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概要

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• Statistical and stochastic properties of the stacking sequences of SiC nanowires are investigated to reveal the rule by which the successively growing layers stack. We show that the stacking sequences exhibit multiscaling. We also observe marked stacking property changes when a cubic segment becomes as long as 5–8 Si–C double layers: long segments tend to follow a power law, while short segments have an exponential distribution.

• 2009-04-15

著者

• Yoshida Hideto

  Graduate School Of Science Osaka University

• Kohno Hideo

  Graduate School Of Science Osaka University

• Takeda Seiji

  Graduate School Of Biological Sciences Nara Institute Of Science And Technology

• Ichikawa Satoshi

  Organization For Promotion Of Research On Nanoscience And Nanotechnology Osaka University

• Ichikawa Satoshi

  Organization for Promotion of Research on Nanoscience and Nanotechnology, Osaka University, Toyonaka, Osaka 560-0043

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