22pPSB-1 Graphene epitaxially grown on the step with unit-cell height of 4H-SiC(0001) substrate

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 2008-08-25

著者

• Ye M.

  Grad. Sch. Sci. Hiroshima Univ.

• Cui Y.

  HSRC, Hiroshima Univ.

• Kimura A.

  Grad. Sch. Sci. Hiroshima Univ.

• Sawada M.

  HSRC, Hiroshima Univ.

• Namatame H.

  HSRC, Hiroshima Univ.

• Taniguchi M.

  Grad. Sch. Sci. Hiroshima Univ.

• Qiao S.

  Dep. Phys., Fudan Univ.

• TAGUCHI Munetaka

  RIKEN/SPring-8

• 田口 政義

  日大生産工

• Namatame Hirofumi

  広大放セ

• Namatame Hirofumi

  Department Of Physics Faculty Of Science University Of Tokyo

• Namatame Hirofumi

  Hiroshima Synchrotron Radiation Center Hiroshima Univ.

• Taguchi M.

  Riken/spring-8

• 崔 芸濤

  広大放セ

• 崔 芸涛

  広大院理

• Takata M

  Department Of Physics Division Of Material Science Nagoya University

• Namatame Hirofumi

  Hiroshima Synchrotron Radiation Center Hiroshima Univ. Higashi-hiroshima 739-0046 Jpn

• Namatame H.

  Hsrc Hiroshima Univ.

• Taniguchi Masaki

  Grad. Sch. Sci. Hiroshima Univ.:hsrc Hiroshima Univ.

• Muro T

  Jasri Spring-8

• Taniguchi M

  Grad. Sch. Sci. Hiroshima Univ.:hsrc Hiroshima Univ.

• Cui Y.t.

  Hsrc Hiroshima Univ.

• Qiao S.

  Dept. Phys. Fudan Univ.:laboratory Of Advanced Materials Fudan Univ.

• Namatame Hirofumi

  Department Of Materials Science Facalty Of Science Hiroshima University

• Tsubota Masami

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• 田口 政義

  Riken/spring-8

• Miyahara T

  Department Of Physics Tokyo Metropolitan University

• Taniguchi M.

  Grad. Sch. Sci. Hiroshima Univ.:hsrc Hiroshima Univ.

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