メソ構造を有するP_2O_5-SiO_2系薄膜の作製とその電気伝導度

概要

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Mesostructured P_2O_5-SiO_2 thin films were prepared using the spin coating method with a precursor solution. The precursor solution was prepared from tetraethyl orthosilicate(TEOS), triethyl phosphate(TEP), and cethyltrimethylammonium bromide (CTAB). The electric conductivity of the prepared thin films was measured using the alternating current impedance method. The following results were obtained. 1. It was easy to prepare the uniform and transport precursor solution using TEP as the phosphorus element. The thin films prepared with this solution were transparent and had mesostructures. Furthermore, the sulfone group could be introduced into the thin film prepared by the surface modification method. 2. Electric conductivity of the mesostructured P_2O_5-SiO_2 thin films increased as the temperature increased. Moreover, the conductivity of the thin films increased under higher humidity. The electric conductivity of the thin films for which surface modification took place was 3.76×10^<-2>S/cm at 503K.
東海大学の論文