20509 並列分子動力学を用いた薄膜の生成に関する定量評価(大規模数値解析(2),OS11 大規模数値解析)

概要

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Chemical vapor deposition (CVD) is gradually emphasized as one promising method for nanomaterial formation. Such growth mechanism has been mainly investigated in experiment. Due to large cost of the equipment of experiment and low level of current measurement, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin film. Through simulations, the speed of epitaxial growth, adhesion, the degree of epitaxy are increased with velocity increasing. Moreover, the epitaxial growth became well as the temperature of substrate was raised within a certain range, and the degree of epitaxy of small cluster was larger than larger cluster. The results indicated that the property of thin film could be controlled if the effect of situations of process was made clear.
一般社団法人日本機械学会の論文
2006-03-09