Ce置換,Bi-Si-O添加によるSr-Ce-Bi-Ta-Si-O系強誘電体の結晶構造と強誘電性の変化

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The samples corresponding to the partial replacement of Sr by Ce in SrBi_2Ta_2O_9, Sr_<1-x>Ce_xBi_2Ta_2O_9 (x=0.1, 0.2, 0.3) and Bi_4Si_3O_<12>, Bi_2SiO_5 added Sr_<1-x>Ce_xBi_2Ta_2O_9 were obtained by the solid-state reaction, and we investigated the relationship between the ferroelectric properties and crystal structure of these materials. From the P-E hysteriesis measurement, Sr_<0.8>Ce_<0.2>Bi_2Ta_2O_9 has a higher Pr and lower Ec. Pr increased and Ec decreased by adding Bi_4Si_3O_<12> or Bi_2SiO_5 to Sr_<0.8>Ce_<0.2>Bi_2Ta_2O_9. We examined the effects of the Ce substitution and adding Bi_4Si_3O_<12> or Bi_2SiO_5 to Sr_<1-x>Ce_xBi_2Ta_2O_9 on the tilting of the TaO_6 octahedron. Sr_<1-x>Ce_xBi_2Ta_2O_9 and that added with Bi_4Si_3O_<12> or Bi_2SiO_5 had a higher spontaneous polarization, and a smaller tilting angle (α_a) of the TaO_6 octahedron when compared to those of SrBi_2Ta_2O_9.
社団法人日本セラミックス協会の論文
2007-12-01