炭酸ナトリウム融解/温水溶解-誘導結合プラズマ発光分光分析法による炭化ケイ素中の微量ホウ素の定量(アナリティカルレポート)

概要

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Boron determination in a silicon carbide (SiC) sample was carried out by a dissolution technique with an alkaline solution. Using the proposed method, a 0.50 g sample of silicon carbide powder was placed in a platinum dish and fused with 3.0 g of sodium carbonate. After the cake was dissolved in water, boron was determined by inductively coupled plasma atomic emission spectrometry (ICP-AES). Through this method, it was possible to determine with high precision the amount of boron in the SiC sample.
2007-10-05