Effect of bias sweep on pentacene thin film transistor (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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In this paper, we report dynamic effects of bias sweep on pentacene thin film transistors during the measurement of current-voltage characteristics. A device was measured using two different methods; namely, the gate-sweep method and the drain-sweep method. These methods were compared each other under various bias sweep conditions such as different sweep, direction and different sweep steps. The experimental results show that drain current can. be underestimated while the gate bias keeps under on-state. Also, the drain current can be overestimated while the gate bias changes from off-state to on-state. We interpret these phenomena as time dependent behavior of charge trapping. For accurate modeling of the device, the dynamic effects of charge trapping should be considered.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Kim Bo-sung
Lcd R&d Center Lcd Business Samsung Electronics Co. Ltd.
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Jung Sung-woo
National Center For Nanomaterials Technology (ncnt)
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Jeong Yoon-Ha
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Jeong Yoon-ha
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology:national
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Jeong Yoon-ha
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Sohn Chang-Woo
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Song Keun-Kyu
LCD R&D Center LCD Business, Samsung Electronics Co., Ltd.
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Shin Seong-Sik
LCD R&D Center LCD Business, Samsung Electronics Co., Ltd.
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Song Keun-kyu
Lcd R&d Center Lcd Business Samsung Electronics Co. Ltd.
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Sohn Chang-woo
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Shin Seong-sik
Lcd R&d Center Lcd Business Samsung Electronics Co. Ltd.
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Jeong Yoon-ha
Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology:national
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Jung Sung‐woo
National Center For Nanomaterials Technol. (ncnt) Gyeongbuk Kor
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