RF Characteristics for 70nm MOSFETs below 77K (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• The RF characteristics of 70nm MOSFETs were measured and analyzed below liquid nitrogen temperature. Significant improvements in DC and RF performance were observed at cryogenic temperature. The transconductance (g_m) has the peak point at 25K due to carrier freeze out effect. The cut-off frequency (f_T) and the maximum oscillation frequency (f_<max>) increase over a temperature range of 4K to 77K as the temperature decreases. A simple small signal sub-circuit model was used to understand the dependence of device parameters with temperature. The improvement in the cut-off frequency below 25K is because the extrinsic capacitance is relatively small at 4K. Results show that the temperature dependence observed for the cut-off frequency and the maximum oscillation frequency is also valid below liquid nitrogen temperature.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Choi Gil-bok

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Back Rock-hyun

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Jung Sung-woo

  National Center For Nanomaterials Technology (ncnt)

• Kang Hee-sung

  System Lsi Division Samsung Electronics Co. Ltd.

• Hong Seung-ho

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Jeong Yoon-Ha

  Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology

• Jeong Yoon-ha

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology:national

• Jeong Yoon-ha

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Jeong Yoon-ha

  Dept. Of Electronic And Electrical Engineering Pohang University Of Science And Technology:national

• Jung Sung‐woo

  National Center For Nanomaterials Technol. (ncnt) Gyeongbuk Kor

• Baek Rock-Hyun

  Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology

関連論文

• RF Characteristics for 70nm MOSFETs below 77K (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• RF Characteristics for 70nm MOSFETs below 77K (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
• Effect of bias sweep on pentacene thin film transistor (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Effect of bias sweep on pentacene thin film transistor (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
• Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the $Y$-Function Technique

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