3.Bi-Nemセルに於けるU状態とT状態からなるストライプドメインの発生

概要

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A new type of stripe texture in Bi-Nem cell is observed under a polarizing optical microscope under the condition where a pulse voltage with an amplitude and pulse width within certain ranges is applied. The stripe texture consists of the stripe domains of the U state and the T state that appear alternatively along the certain direction. Width of the stripe domain is about several micro-meters. The width tends to increase with the increase of cell thickness and the intrinsic pitch of chiral nematic filled in the cell. The stripe domain is formed when small T state regions which appear randomly in the region of U state are gathered gradually during the pulse voltage applicaiton by several times. When the pulse voltage is applied, the stripe texture travels in the direction which corresponds to the opposite direction of the LC flow which occurs in the transition process from the U state to the T state. When the voltage is turned off, the strip texture is memorized for a long time.
2006-04-30