Crystal Structure of Epitaxial Co Thin Film Grown on Al_2O_3(0001) Substrate(Head materials & recording media,The 8th Asian Symposium on Information Storage Technology (ASIST-8))
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概要
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The effects of substrate temperature and buffer layer material on the crystal structure of Co thin film epitaxially grown on Al_2O_3(0001) substrate were investigated. The substrate temperature was varied in a range between 30℃ and 400℃. Co films grown directly on Al_2O_3(0001) substrates consist of a mixture of fcc and hcp phases with stacking faults. An fcc-Co single crystal film was obtained when a Cu buffer layer was introduced, while on an Au buffer layer an hcp-Co single crystal film grew at a substrate temperature of 300℃.
- 社団法人電子情報通信学会の論文
- 2006-11-02
著者
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Ohtake Mitsuru
Chuo University
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FUTAMOTO Masaaki
Chuo University
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OHTAKE Mitsuru
Faculty of Science and Engineering, Chuo University
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AKITA Yuta
Faculty of Science and Engineering, Chuo University
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KIRINO Fumiyoshi
Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music
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FUTAMOTO Masaaki
Faculty of Science and Engineering, Chuo University
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Futamoto Masaaki
Faculty Of Science And Engineering Chuo Univ.
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Akita Yuta
Faculty Of Science And Engineering Chuo University
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Kirino Fumiyoshi
Graduate School Of Fine Arts Tokyo National University Of Fine Arts And Music
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