Classical MD Simulation of C_<60> Adsorbed on GaAs(001) Surface

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概要

• 論文の詳細を見る

• Constant temperature classical molecular dynamics(MD) simulation is carried out to investigate the C_<60> adsorption on GaAs(001) As-rich surface, which was recently reported by the STM experiment by Xue et al.. The present theoretical results agree with one of the important feature of the STM observation, i.e. the pairing of C_<60> on the first layer. Unfortunately, in the overlayers, the (110) C_<60> thin film cannot be realized in the present simulation as opposed to the STM observation. This suggests the necessity to include the effect of charge transfer from As to C_<60>, which was not taken into account in the present simulation.C_<60>GaAsepitaxial growthclassical molecular dynamicssurfaceadsorption

• 東北大学の論文
• 1996-03-22

著者

• KAWAZOE Yoshiyuki

  Institute for Materials Research, Tohoku University

• Ohno K

  Tohoku Univ. Sendai Jpn

• Ohno Kaoru

  Institute for Materials Research

• Kawazoe Y

  Institute For Materials Research Tohoku University

• Kawazoe Yoshiyuki

  Institute For Materials Research Tohoku University

• Ohno Kaoru

  Institute For Materials Research Tohoku University

• Kamiyama Hiroshi

  Aomori Public College

• Kawazoe Yoshiyuki

  Institute For Material Research Tohoku University

• Ohno K

  Department Of Electronics And Electrical Engineering Faculty Of Science And Technologies Keio Univer

• Kamiyama H

  Aomori Public Coll. Aomori Jpn

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