高機能分析チップ作製のための石英の深さ100μm以上のディープドライエッチング(<特集>エレクトロニクス(電子工学)特集)

概要

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The newly developed backside exposure method enabled us to easily fabricate a vertical/high aspect ratio ultra-thick photoresist (SU-8) pattern on a quartz plate. Deep quartz plate etching masked with SU-8 resist was studied employing an ICP etcher with a C_4F_8 / H_2 / Ar gas mixture. Two issues took place in the long time etching. One was a corn-like defect generated on the quartz surface and the other was the variation of SU-8 etch rates during the etching process. The former was eliminated by a high bias cleaning process and an Ar plasma preheating process of the chamber wall improved the latter. Accordingly, a vertically etched profile of 100μm in depth was achieved. Further, atmospheric micro-plasma was generated at a low RF power for high speed processing of materials.
東海大学の論文
2004-03-31