Structural Study of the SiC(0001)(√<3> X √<3>)-R30°Surfaces by Reflection High-Energy Electron Diffraction Rocking Curves : Semiconductors

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概要

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• Two types of √<3> x √<3> surfaces, silicon-rich and carbon-rich, have been observed in a series of annealing processes. Rocking curves from the surface structures of both√<3> x √<3> surfaces have been analyzed by reflection high-energy electron diffraction (RHEED) dynamical calculations. The silicon-rich √<3> x √<3> surface is determined to be terminated with Si adatoms on T4 or H3 sites of the silicon terminated bulk surface. It is considered that the carbon-rich √<3> x √<3> surface consists of a C honeycomb structure. From the results of Auger spectra and RHEED rocking curves, the phase transition from the silicon-rich to the carbon-rich √<3> x √<3> phases is caused by adsorption of atomic hydrogen on the silicon-rich √<3> x √<3> surface.

• 社団法人応用物理学会の論文
• 2002-02-15

著者

• AOYAMA Tomohiro

  Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya Universi

• ICHIMIYA Ayahiko

  Department of Applied Physics, Faculty of Engineering, Nagoya University

• Hisadai Yoshiyuki

  Research Laboratories Denso Corporation

• Hisada Yoshiyuki

  Toyota Technological Institute:(present Address) Denso Corporation

• Mukainakano Shinichi

  Research Laboratories, Nippondenso Co., Ltd.

• Ichimiya A

  Nagoya Univ. Nagoya Jpn

• Ichimiya Ayahiko

  Department Of Applied Physics Faculty Of Engineering Nagoya University

• Aoyama Tomohiro

  Department Of Quantum Engineering Nagoya University

• Aoyama Tomohiro

  Department Of Computational Science And Engineering Graduate School Of Engineering Nagoya University

• Mukainakano Shinichi

  Research Laboratories Denso Corporation

• Hisada Yoshiyuki

  Research Laboratories, DENSO CORPORATION

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