Cl_2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1981-04-05

著者

• Okano Haruo

  Research And Development Center

• Horiike Yasuhiro

  Research And Development Center

• Ueda Yoshiya

  Toshiba Semiconductor Division Toshiba Corporation

• SAGAWARA Takuji

  Research and Development Center

• SHIBAGAKI Masahiro

  Research and Development Center

関連論文

• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Thin Film Deposition by Low Energy SiCl^+_n Beam
• Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
• Cl_2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma
• Si and SiO_2 Etching Characteristics Using Reactive Ion Etching with CF_4-Cl_2 Gas Mixture

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