Thin Film Deposition by Low Energy SiCl^+_n Beam

概要

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The reaction between mass-separated low-energy (30 eV) SiCl^+_n ion beams and Si and SiO_2 substrates was studied to investigate the influence of the number of Cl atoms in SiCl_n species on their deposition characteristics. It has been found that the deposition yield of Si is positive (deposition) at n=I and it becomes negative (etching) at n=3 on the Si substrate while it is nearly zero on SiO_2. In the presence of O_2 gas, the deposited species change to silicon oxides and the deposition of SiO_2 also takes place on SiO_2 with SiCl^+_3. The etching of Si by SiCl^+_3, however, takes place and the etching yield was found to be unaffected by O_2. These results can be explained if adsorbed Cl atoms are assumed to desorb as SiCl_2, leaving either Si or Cl on the substrate depending on the value of n. In the O_2 ambience, the preferred bonding of Si with O leads to the deposition of SiO_2, except in the case of SiCl^+_3 on Si where excess Cl atoms react with Si.
社団法人応用物理学会の論文
1993-06-30