Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• Bubble-free bonding of 4-inch silicon wafers on either silicon or quartz wafers is achieved outside a cleanroom. Two wafers are stacked horizontally in a rack with the two mirror-polished surfaces facing each other. In order to avoid wafer contact during hydrophilizaiton, cleaning, and drying, the wafers are separated in the rack by teflon spacers introduced at the wafer edges. After drying the wafers by a spin dryer, the spacers are removed and bonding occurs. Using this procedure we are also able to monitor the bonding process between quartz and silicon wafers at different temperatures. We find that the initial wafer bonding process at room temperature stops operating at temperatures above 200℃.

• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Gosele U.

  School Of Engineering Duke University

• AHN K.-Y.

  Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University

• STENGL R.

  Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University

• GOSELE U.

  Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University

• Stengl R.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Ahn K.-y.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

• Gosele U.

  Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University

関連論文

• Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom
• Gold Gettering in Directly Bonded Silicon Wafers
• Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment : Semiconductors and Semiconductor Devices
• Tunneling Structures Fabricated by Silicon Wafer Direct Bonding

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