Gold Gettering in Directly Bonded Silicon Wafers
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概要
- 論文の詳細を見る
Gold gettering in directly bonded silicon wafers was investigated. Wafers of (100) orientation were rotationally misoriented against each other by 1° or 25° and bonded by annealing at 1100℃ for 2 hours in nitrogen. Transmission electron micrographs had shown two different bonding interface structures depending on the rotational angle. The bonded wafers were gold-deposited on one side and annealed for 3 hours at 950℃ or 1000℃ in vacuum. The spreading resistance was measured and the result showed a double-U profile in both 1°-misoriented and 25°-misoriented samples. Our results show for the first time that the bonding interface acts as a gettering site and that the bonding interface might be used to artificially introduce gettering sites close to the regions in which devices would be fabricated.
- 社団法人応用物理学会の論文
- 1989-05-20
著者
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Yang W.-s.
Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University
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Gosele U.
School Of Engineering Duke University
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AHN K.-Y.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University
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MARIOTON B.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University
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STENGL R.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University
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GOSELE U.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University
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Stengl R.
Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University
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Ahn K.-y.
Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University
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Gosele U.
Department Of Mechanical Engineering And Materials Science School Of Engineering Duke University
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YANG W.-S.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University
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STENGL R.
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University:(Present address) Siemens AG, Research Laboratories
関連論文
- Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom
- Gold Gettering in Directly Bonded Silicon Wafers
- Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment : Semiconductors and Semiconductor Devices
- Tunneling Structures Fabricated by Silicon Wafer Direct Bonding